vishay siliconix sup85n03-3m6p document number: 65536 s09-2271-rev. a, 02-nov-09 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? power supply - secondary synchronous rectification ? dc/dc converter product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 30 0.0036 at v gs = 10 v 85 d 67 0.0044 at v gs = 4.5 v 85 d t o-220ab t op v i e w gd s ordering information: SUP85N03-3M6P-GE3 (lead (pb)-free and halogen-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 85 d a t c = 70 c 85 d pulsed drain current i dm 120 avalanche current i as 45 single avalanche energy a l = 0.1 mh e as 101 mj maximum power dissipation a t c = 25 c p d 78.1 b w t a = 25 c c 3.1 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 1.6
www.vishay.com 2 document number: 65536 s09-2271-rev. a, 02-nov-09 vishay siliconix sup85n03-3m6p notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v ds = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 12.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 125 c 50 v ds = 30 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 22 a 0.0030 0.0036 v gs = 4.5 v, i d = 20 a 0.0036 0.0044 forward transconductance a g fs v ds = 15 v, i d = 20 a 110 s dynamic b input capacitance c iss v gs = 0 v, v ds = 15 v, f = 1 mhz 3535 pf output capacitance c oss 680 reverse transfer capacitance c rss 400 total gate charge c q g v ds = 15 v, v gs = 10 v, i d = 20 a 67 100 nc gate-source charge c q gs 10.5 gate-drain charge c q gd 12.2 gate resistance r g f = 1 mhz 0.3 1.4 2.8 tu r n - o n d e l ay t i m e c t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 11 20 ns rise time c t r 10 20 turn-off delay time c t d(off) 35 53 fall time c t f 10 20 drain-source body diode ratings and characteristics t c = 25 c b continuous current i s 85 a pulsed current i sm 120 forward voltage a v sd i f = 10 a, v gs = 0 v 0.83 1.5 v reverse recovery time t rr i f = 10 a, di/dt = 100 a/s 41 62 ns peak reverse recovery current i rm(rec) 23a reverse recovery charge q rr 40 60 nc
vishay siliconix sup85n03-3m6p document number: 65536 s09-2271-rev. a, 02-nov-09 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transfer characteristics transconductance 0 20 40 60 8 0 100 120 0.0 0.5 1.0 1.5 2.0 v gs =10 v thr u 4 v v gs =3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 1 2 3 4 5 0.0 0.6 1.2 1. 8 2.4 3.0 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 60 120 1 8 0 240 300 0 1224364 8 60 t c = 125 c t c = - 55 c t c = 25 c i d - drain c u rrent (a) - transcond u ctance (s) g fs on-resistance vs. drain current on-resistance vs. gate-to-source voltage gate charge 0.0025 0.0030 0.0035 0.0040 0.0045 0 204060 8 0 100 v gs =4.5 v v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0.000 0.004 0.00 8 0.012 0.016 0.020 0246 8 10 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 2 4 6 8 10 0204060 8 0 v ds =24 v v ds =15 v i d =20a v ds = 8v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs
www.vishay.com 4 document number: 65536 s09-2271-rev. a, 02-nov-09 vishay siliconix sup85n03-3m6p typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage capacitance on-resistance vs. junction temperature 0.1 1 10 100 0.00.20.40.60. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.6 0.9 1.2 1.5 1. 8 - 50 - 25 0 25 50 75 100 125 150 i d =20a v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) threshold voltage drain source breakdown vs. junction temperature current derating 0.6 0.9 1.2 1.5 1. 8 2.1 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) 33 35 37 39 41 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ds - drain-to-so u rce v oltage ( v ) t j -j u nction temperat u re (c) 0 40 8 0 120 160 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a)
vishay siliconix sup85n03-3m6p document number: 65536 s09-2271-rev. a, 02-nov-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65536 . single pulse avalanche current capability vs. time time (s) (a) i da v 100 10 1 10 -3 10 -2 10 -1 10 -4 10 -5 t j = 25 c t j = 150 c safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 t c = 25 c single p u lse b v dss limited limited b yr ds(on) * 1s,10s,dc 1ms 10 ms, 100 ms 100 a v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d normalized thermal transient impedance, junction-to-case 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.05 single p u lse 0.02
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